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Friday, May 8, 2020 | History

2 edition of Shallow donors in n-GaAs found in the catalog.

Shallow donors in n-GaAs

Anton van Klarenbosch

Shallow donors in n-GaAs

a FIR laser study

by Anton van Klarenbosch

  • 353 Want to read
  • 5 Currently reading

Published by s.n. in [Leiden? .
Written in English

    Subjects:
  • Gallium arsenide semiconductors -- Defects.,
  • Semiconductor doping.,
  • Far infrared lasers.

  • Edition Notes

    Statementdoor Anton van Klarenbosch.
    Classifications
    LC ClassificationsQC611.8.G3 K53 1990
    The Physical Object
    Pagination120 p. :
    Number of Pages120
    ID Numbers
    Open LibraryOL1164022M
    LC Control Number94144097

    Contents xi Exciton Spin Dynamics under Resonant Excitation 95 Exciton Spin Quantum Beats: The Role of Anisotropic. The residual donors have been analyzed by far infrared spectroscopy and found to be sulfur and silicon. Epilayers with thicknesses of up to {micro}m have been deposited on more» {micro}m thick semi-insulating GaAs substrates and on {micro}m thick n{sup +}-type GaAs substrates.

    (b) If Nd=3x cm-3 and Na=x cm-3, redesign the resistor. (c) Discuss the relative lengths of the two designs compared to the doping concentration. Is there a linear relationship? Problem 4: Calculate the conductivity at K and K for intrinsic Si and intrinsic GaAs. (Parameters can be found in the appendix at the end of the book).   What is claimed is: 1. A method of depositing a doped epitaxial layer of a II-VI compound on the surface of a substrate in a deposition zone of a reactor of an organometallic chemical vapor deposition system comprising the steps of heating the deposition zone of the reactor to a temperature in the range of about ° C. to ° C. to produce pyrolytic action that provides sufficient surface.

    Full text of "Ohmic contacts to P-type gallium nitride" See other formats. This thesis consists of a study of several qualification techniques for SI LEC GaAs and the application of these techniques to various ingots. For use on the starting material before any doping procedures, the technique of studying the semi-insulating properties by monitoring the activation energy of dark resistivity with temperature was investigated. Experiments were performed on both ring.


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Shallow donors in n-GaAs by Anton van Klarenbosch Download PDF EPUB FB2

If a semiconductor contains both shallow donors and shallow acceptors it is called compensated since equal amounts of donors and acceptors compensate each other, yielding no free carriers. The presence of shallow donors and shallow acceptors in a semiconductor cause the electrons given off by the donor to fall into the acceptor Shallow donors in n-GaAs book which.

A piece of germanium doped with 10 16 cm-3 shallow donors is illuminated with light generating 10 15 cm-3 excess electrons and holes. Calculate the quasi-Fermi energies relative to the intrinsic energy and compare it to the Fermi energy in the absence of illumination.

Solution: The carrier densities when illuminating the semiconductor are. The characteristics of the Coulomb scattering of conduction electrons at shallow donor centers in Alx Ga1 − x As/n-GaAs/Alx Ga1 − x As quantum well heterostructures are studied theoretically.

Experimental investigations of nonlinear oscillations and the formation of current filaments due to impact ionization of shallow donors in n-GaAs at low temperatures are summarized. Measurements of the temporal and spatial structure of nonequilibrium current flow provided a concise microscopic basis of the observed regular, quasiperiodic Cited by: 9.

The far‐infrared magnetoabsorption of shallow donors in n‐GaAs has been investigated as a function of irradiation intensity applying a low‐temperature photoacoustic cell. Optical cross sections and saturation intensities of various optical transitions were quantitatively determined yielding recombination times of excited by: 2.

A.J. Kalkman, H.P.M. Pellemans, T.O. Klaassen, Wenckebach, Far-infrared pump-probe measurement of the lifetime of the 2p-1 shallow donor level in n-GaAs, Int.J. of Infrared and Millimeter Waves ().

CrossRef ADS Google ScholarAuthor: Tjeerd O. Klaassen, Janette L. Dunn, Colin A. Bates. Fano resonances in the impurity photoexcitation spectra of semiconductors doped with shallow donors Article in Journal of Experimental and Theoretical Physics (4) January with 9.

To study hydrogenic levels in n-type GaAs in magnetic field, far-infrared photoconductivity measurements and variational calculations for the levels h Cited by: 1.

Introduction. A current density filament can be formed in n-type semiconductors between ohmic contacts by applying an electric field of a few V/cm due to the low-temperature impurity breakdown of neutral shallow donors.Recently, the self-organization process, and the dynamical behaviors, of the current density filaments in n-GaAs Corbino disks have been investigated numerically, and Cited by: 1.

A theoretical analysis is carried out of deep level transient spectra (DLTS) obtained on bulk moderately doped n‐GaAs. The semiconductor is considered as a disordered one because fluctuations in the concentration of shallow donors and acceptors produce a random potential energy with a root‐mean‐square (RMS) fluctuation comparable to the mean thermal energy of the by: Description; Chapters; Supplementary; Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics.

In uncompensated phosphorus or arsenic-doped silicon, observation of the shallow, donor absorption line spectrum for donor concentrations from 10(12) to 2 x 10(18)/cc, yields information about the bound states of the donor electrons and the behavior of the conduction band edge.

With increasing concentration, the photon induced IS(A) → 2P(o) and IS(A) → y 2P(±) transition lines are Author: Ronald Hirokazu Kuwahara. Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen.

The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record scientists from 40 countries participated in the Conference which was held in San Francisco August 61 0, The Conference was organized by the ICPS Committee and.

Dr. Reinhard Katterloher. at Max-Planck-Institut für extraterrestrische Physik. SPIE Involvement: Author Publications (38) Proceedings Article | 9 September Testing the near-infrared optical assembly of the space telescope Euclid.

Christof Bodendorf, Norbert. This volume represents the Proceedings of the Oji International Seminar on the Application of High Magnetic Fields in the Physics of Semiconductors and Magnetic Materials, which was held at the Hakone Kanko Hotel, Hakone, Japan, from 10 to 13 September The Seminar was organized as a related.

Luminescence due to shallow donors, shallow acceptors and deeper levels such as VCd-DCd (D=shallow donor) was monitored for a series of specially selected samples.

The results of the PL and PLE studies were correlated with a detailed study of EPR and photo-induced EPR. Get this from a library. Physics in High Magnetic Fields: Proceedings of the Oji International Seminar Hakone, Japan, September[Sōshin Chikazumi; Noború Miura] -- This volume represents the Proceedings of the Oji International Seminar on the Application of High Magnetic Fields in the Physics of Semiconductors and Magnetic Materials, which was held at the.

This is due to additional acceptor traps created after irradiation, which act as recombination centers to compensate the shallow donors in the undoped n-GaAs devices. Similar phenomenon was observed by Stievenard et al., who reported that the free-carrier concentration of GaAs decreases as the electron fluence increases [ 15 ].

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This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research.

Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor.Deep and Shallow Impurity States -- 7 Deep Level Behavior in Superlattice -- 8 Role of the Si Donors in Quantum and Ultraquantum Transport Phenomena in GaAs-GaAlAs Heterojunctions -- 9 Defects Characterization in GaAs-GaAlAs Superlattices -- 10 Studies of the DX Centre in Heavily Doped n+GaAs -- 11 Shallow and Deep Impurity Investigations: the.From the analysis of the Hall-effect data, the concentration of compensating donors was found to be greater than 10 18 cm-3 for all of the magnesium-doped samples of Figure 4.

Possible candidates for compensating donors are the nitrogen vacancy (V N) and substitutional oxygen (O N), the latter exhibiting a strong affinity to r, the hole concentration is only marginally affected.